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Features
Buffered memory type Unregistered (unbuffered)
CAS latency 22
Internal memory 8 GB
Memory layout (modules x size) 1 x 8 GB
Internal memory type DDR4
Memory data transfer rate 3200 MT/s
Component for Laptop
Memory form factor 260-pin SO-DIMM
ECC No
Memory voltage 1.2 V
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
Country of origin Taiwan
Lead plating Gold
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Storage temperature (T-T) -55 - 100 °C
Technical details
Compliance certificates RoHS
Sustainability
Doesn't contain Halogen
Weight & dimensions
Width 69.6 mm
Height 30 mm
Logistics data
Harmonized System (HS) code 84733020

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